STMicroelectronics Signs License And Cooperation Agreement On LDMOS Technology From Innogration

 ·         Arrangement expands serviceable RF power market for ST

·         Mature and proven technology is very well suited for applications such as wireless infrastructure; industrial, scientific, and medical; avionics and radar; and non-cellular radio

 

Geneva, February 14, 2018 - STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, today announced it has signed an agreement on LDMOS [1] RF power technology from Innogration Technologies, a fabless semiconductor company headquartered in Suzhou, China, specializing in the design and manufacturing of RF power semiconductor devices, modules, and sub-system assemblies.

Combining a short conduction-channel length with a high breakdown voltage, LDMOS devices are well suited for RF power amplifiers where they can be used in base stations for wireless communications systems, as well as in the power amplifiers for commercial and industrial systems. The agreement with Innogration expands the range of applications that ST can address with LDMOS technology.

 

Terms of the agreements were not disclosed.

 

 

 

About STMicroelectronics

ST is a global semiconductor leader delivering intelligent and energy-efficient products and solutions that power the electronics at the heart of everyday life. ST's products are found everywhere today, and together with our customers, we are enabling smarter driving and smarter factories, cities and homes, along with the next generation of mobile and Internet of Things devices. By getting more from technology to get more from life, ST stands for life.augmented.

In 2017, the Company's net revenues were $8.35 billion, serving more than 100,000 customers worldwide. Further information can be found at www.st.com.

For Press Information Contact:

STMicroelectronics Michael Markowitz Director Technical Media Relations +1 781 591 0354 michael.markowitz@st.com

[1] LDMOS - Laterally Diffused Metal Oxide Semiconductor

Attachments:

http://www.globenewswire.com/NewsRoom/AttachmentNg/91e1911b-4a9e-4b6b-8c10-aed37d5a5662

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