Cypress Semiconductor Corp. (Nasdaq: CY), today announced production availability of a high-density video frame buffer that addresses the market’s increasing demand for high-bandwidth video buffering. The 72-Mbit device is based on Cypress’s industry-leading SRAM technology, operating as a First-In, First-Out ( FIFO) memory with independent read and write ports for fast data transfer. The video frame buffer provides a simple SRAM-based interface that reduces implementation and debugging effort, improves time-to-market, and reduces engineering costs. High-definition video usage is increasing in medical and military applications, along with its booming popularity in the consumer electronics market. The new CYFB0072 video frame buffer provides an effective alternative to standard DRAM-based FIFO memories used in these markets. The device delivers enhanced signal integrity and operates at frequencies up to 133 MHz with throughput up to 4.8 Gbps—commonly required for buffering video frames. With the ability to operate in any system that needs buffering at high speeds across different clock domains, the video frame buffers are ideal for a wide range of video and image processing applications, including picture-in-picture and interlacing in HD cameras, scan rate conversion in broadcast equipment, image scanning and enhancement in medical equipment, and radar and sonar in military systems. “With the push for high-bandwidth video applications in a broad range of markets, Cypress’s new video frame buffer solution will help system designers get their products to market faster and with improved performance,” said Sunil Thamaran, senior business unit director in the Memory Products Division at Cypress. “The device provides a more stable, cost-effective alternative to DRAM-based FIFOs to meet the rapidly growing demand for video buffering.” The 72-Mbit video frame buffer is configured in a bus width of 36 bits. Unlike DRAM-based buffer solutions, it operates in the industrial temperature range of -40 °C to +85 °C and does not require an external crystal. The device is available in low voltage complementary metal oxide semiconductor (LVCMOS), with the CYFB0072V33L device supporting 3.3V operation and the CYFB0072V18 device supporting 1.8V operation.