TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF solutions supplier and technology innovator, today announced that RF-Lambda, a global microwave products manufacturer, has developed a new line of high power amplifiers based on TriQuint gallium nitride (GaN) power transistors. RF-Lambda’s new products are currently being qualified in commercial 4G systems, a defense flight system and other defense / aerospace projects. Reducing part counts and maintaining performance was central to RF-Lambda’s decision, says R&D Director Michael Liu. “We formerly supplied a key customer with two separate GaAs amplifiers to cover two bands. By using TriQuint GaN, we were able to replace those with a single GaN HEMT and cover the full frequency range. This increased design flexibility while decreasing production variation. Our customers also benefit by using software to switch bands rather than physically changing hardware, while still achieving necessary power. Our products support some of the world’s leading defense and commercial communications companies.” RF-Lambda is developing other new power amplifiers based upon TriQuint GaN transistors including a 1-18 GHz, 50 Watt device and 20W/40W solutions for 0.1-6 GHz as well as the industry-leading RFLUPA0706GE (0.7-6 GHz) 7W amplifier. James L. Klein, TriQuint Vice President and General Manager for Infrastructure and Defense Products said, “TriQuint is glad to play a role in this new line of high-power amplifiers. TriQuint GaN products offer important size, weight and power advantages that the defense industry was fast to appreciate. We now see more commercial applications using GaN thanks to its advantages, and we look forward to supporting RF-Lambda’s new programs.” Market researcher Strategy Analytics foresees significant GaN growth. “While defense supported GaN in many applications, communication infrastructure utilization is growing fast. Sat-Com, power and other infrastructure markets are ramping to higher revenues. Strategy Analytics forecasts that the market for GaN microelectronic devices will grow with a compound average annual growth rate of over 34% to approximately $186M by 2015,” said Eric Higham, Director of Semiconductor Practice.
Technical DetailsTriQuint’s new GaN high electron mobility transistor (HEMT) devices offer optimized power and efficiency at high drain voltage operating conditions. RF-Lambda chose the T2G6001528-Q3, which offers typical power added efficiency greater than 50% at 15dB gain; its performance can reduce the number of transistors in a design, which also benefits heat management. These advantages can lower part counts, reduce board space and lower overall system costs. The T2G6001528-Q3 is offered in a low thermal resistance, flangeless package. Samples and evaluation boards are now available. Contact TriQuint for product information, or visit our Sales webpage for assistance; register to receive product updates through TriQuint’s newsletter.
|GaN RF Power Transistor||DC - 6||>15||20||28||42.5||50||4x5mm||T2G6001528-Q3|