ALISO VIEJO, Calif., May 1, 2013 /PRNewswire/ -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced it is leveraging Intel Corporation's (Nasdaq: INTC) industry-leading, onshore foundry technology for the development of advanced high-performance digital integrated circuits (ICs) and system-on-chip (SoC) solutions using Intel's revolutionary 22 nanometer (nm) 3-D Tri-Gate transistor technology. (Logo: http://photos.prnewswire.com/prnh/20110909/MM66070LOGO) Consistent with Microsemi's strategy, this agreement signed in January 2013 will leverage the company's comprehensive technology portfolio into higher-performance, higher-dollar value opportunities. Intel's Tri-Gate transistors provide an unprecedented combination of performance and power efficiency, enabling Microsemi to develop digital ICs for high-performance computing, network acceleration and signal processing applications. Microsemi is currently engaged with customers and has started designs utilizing Intel's 22nm process node with product delivery anticipated to begin in late 2014 to early 2015. "The high-value applications we address require semiconductor solutions with unique performance and complex functional attributes," said Paul Pickle, executive vice president of Microsemi's Integrated Circuits group. "Using Intel's innovative process technology and silicon-proven IP will enable us to expand our opportunity in the markets we serve with higher-performance, lower-power digital ICs for the communications and defense markets." "Intel is pleased to manufacture Microsemi's digital IC solutions utilizing Intel's leading 22nm process technology and IP solutions," said Sunit Rikhi, vice president, Technology and Manufacturing Group, Intel. About Intel's 3-D Tri-Gate TransistorsIntel's 3-D Tri-Gate transistors are a reinvention of the transistor. The traditional "flat" two-dimensional planar gate is replaced with an incredibly thin three-dimensional silicon fin that rises up vertically from the silicon substrate. Control of current is accomplished by implementing a gate on each of the three sides of the fin—two on each side and one across the top—rather than just one on top, as is the case with the 2-D planar transistor. The additional control enables as much transistor current flowing as possible when the transistor is in the "on" state (for performance), due to the lower parasitics of the tri-gate structure and as close to zero as possible when it is in the "off" state (to minimize power). This enables the transistor to switch very quickly between the two states (again, for performance). To put the speed into perspective, a 22nm transistor can switch off and on well over a billion times in one second. About MicrosemiMicrosemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com. Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.