Because of these positive results, Natcore is now rapidly moving to protect its selective emitter intellectual property, and is in the process of filing provisional patents."The solar industry has been clamoring for a selective emitter application that is cost-effective because of its demonstrated improvement to cell efficiencies," notes Natcore's CEO, Chuck Provini. "In fact, once Dr. Daniele Margadonna joined our Science Advisory Board and learned of our plans to install a new diffusion furnace, he immediately urged us to simultaneously pursue a selective emitter approach. I'm pleased to say that we were very quickly able to demonstrate the efficacy of our technology toward this crucial and valuable application." Natcore's black silicon and selective emitter applications are not mutually exclusive; in fact, they are synergistic. Indeed, the envisioned production process would allow both of these important improvements to be seamlessly inserted into a solar cell manufacturing line. "Combining Natcore's black silicon technology with our groundbreaking selective emitter technology could raise today's commercial solar cell efficiencies to new high levels, while still lowering the cost per watt," says Natcore's Chief Technology Officer, Dr. Dennis Flood. "Solar cell manufacturers are aggressively seeking easy-to-implement production steps that will improve their product and profitability without having to raise their prices. Natcore's combination of selective emitter and black silicon technologies promises to do just that." Natcore also announced today that, after conducting due diligence into the company's technology, solar industry pioneer Dr. David Carlson has joined the company's Science Advisory Board. A physicist with a worldwide reputation in photovoltaics and materials science, Dr. Carlson served as the chief scientist of BP Solar until his recent retirement. In 1974, Dr. Carlson invented the amorphous silicon solar cell at RCA Laboratories, and was the first to demonstrate that hydrogenated amorphous silicon could be doped either p- or n-type and could be used to form a semiconductor junction.