IXYS Introduces Fast And Efficient 650V XPT™ Trench IGBTs
IXYS Corporation (NASDAQ: IXYS), a manufacturer of power semiconductors
and integrated circuits for energy efficiency, power management, and
motor control applications, today announced the release of a new IGBT
IXYS Corporation (NASDAQ: IXYS), a manufacturer of power semiconductors and integrated circuits for energy efficiency, power management, and motor control applications, today announced the release of a new IGBT product line – 650V XPT™ Trench IGBTs. The current ratings of devices in the new product family range from 30A to 200A at a high temperature of 110C. With on-stage voltages as low as 1.7V, these new XPT™ devices are designed to minimize conduction and switching losses, especially in hard-switching applications. Optimized for different switching speed ranges (up to 60kHz), these IGBTs provide designers with flexibility in device selection in terms of cost, saturation voltage, and switching frequency. Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. Developed using the IXYS XPT™ thin wafer technology and advanced 4th generation (GenX4™) vertical IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions, Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive energy and switching losses. The co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses thanks to its speed and ‘soft recovery’ characteristics. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. These IGBTs are well-suited for a wide variety of power conversion applications, lighting control, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, automotive and welding equipment.