In addition to the 2Gb and 4Gb devices, Micron has begun sampling 8Gb x 32 DDR3L-RS and is delivering samples of 8Gb x 16 DDR3L-RS; production is slated for December 2012. These products offer additional system design flexibility by reducing board space and increasing density. Additional power and footprint savings are expected with the launch of DDR4-RS in early 2013.

With this announcement Micron is well-positioned to support the growth of ultrathin applications with its broad portfolio of DRAM, NAND, NOR and SSD solutions. For more information, please visit www.micron.com .

The Micron Technology, Inc. logo is available at http://www.globenewswire.com/newsroom/prs/?pkgid=6950
CONTACT: Mary Ellen Ynes         maryellen.ynes@zenogroup.com         650-801-7954

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