Advantest Corporation (TSE: 6857, NYSE: ATE) today announced that it has developed a Terahertz (THz) time-of-flight (TOF) tomography analysis system utilizing short-pulse wide-band THz waves. The new system performs imaging and analysis of multi-layer coatings as thin as 10 μm, enabling the analysis of electrode films in li-ion batteries and layers within multi-coat automotive paint, among diverse new applications. System Features Advantest’s new system features a Cherenkov THz radiation source* 1 that employs non-linear crystals (LiNbO ³;LN)* 2. The Cherenkov phase-matching method, utilizing a proprietary silicon lens developed by Advantest, enables the generation of short wave THz pulses and pseudo mono-pulses—ideal for reflective signal analysis–that cannot be generated with photoconductive elements. This feature facilitates contact-free imaging analysis down to an industry-leading 10 μm thickness. Wider Applications for Advantest’s THz Wave Technology Advantest launched sales of its first THz technology 3D imaging system in April 2010, and has since expanded this product family with innovative non-destructive, contact-free analysis solutions for ceramic products and pharmaceuticals. The company’s newly developed system applies its THz technology to the analysis of electrode films in li-ion batteries, multi-coat automotive paint, and other applications that are outside the scope of traditional ultrasonic and infrared analysis systems. Meanwhile, Advantest is continuing to develop its analysis technology to provide optimal solutions for the analysis of samples with greater functionality and more complex internal structures. The new system will be exhibited at JASIS2012 (Japan Analytical & Scientific Instruments Show, formerly “JAIMA EXPO / SIS”), at the Makuhari Messe International Convention Complex near Tokyo, on September 5-7th, 2012.
About Advantest Corporation A world-class technology company, Advantest is the leading producer of automatic test equipment (ATE) for the semiconductor industry and a premier manufacturer of measuring instruments used in the design and production of electronic instruments and systems. Its leading-edge systems and products are integrated into the most advanced semiconductor production lines in the world. The company also focuses on R&D for emerging markets that benefit from advancements in nanotech and terahertz technologies, and has recently introduced multi-vision metrology scanning electron microscopes essential to photomask manufacturing, as well as a groundbreaking 3D imaging and analysis tool. Founded in Tokyo in 1954, Advantest established its first subsidiary in 1982, in the USA, and now has subsidiaries worldwide. More information is available at www.advantest.co.jp. All information supplied in this release is correct at the time of publication, but may be subject to change.
|*1:||Source where THz waves gain strength in a certain directional angle (Cherenkov radiation angle) and are irradiated. This occurs if the non-linear crystal refraction index for energized light waves is lower than the index for THz waves.|
|*2:||Optical elements that change electromagnetic waves from light wave frequency to THz frequency using non-linear optical effects.|
|* Wave frequency band||7THz (S/N=1)|
|* Measureable film thickness||10 μm or greater (for SOI thin films)|
|TAS Project, New Concept Product Initiative|