International Rectifier, IR ® (NYSE:IRF), a world leader in power management technology, today introduced a family of HEXFET ® power MOSFETs featuring ultra-low on-state resistance (RDS(on)) in an industry-standard SOT-23 package for applications including battery charge and discharge switches, system and load switches, light load motor drives, and telecom equipment.

Utilizing IR’s latest mid-voltage silicon technology, the new SOT-23 MOSFET devices deliver a strong improvement in current handling by minimizing RDS(on) by as much as 90 percent to offer customers optimized performance and price for a given application.

“The new SOT-23 MOSFET family covers the full range of voltages from -30V to 100V with different levels of RDS(on) and gate charge (Qg) to provide an improved and broader range of design options for customers looking for a compact, efficient and cost-effective solution,” said George Feng, marketing engineer, IR’s Power Management Devices Business Unit.

Qualified to moisture sensitivity level 1 (MSL1), the devices are offered lead free and are RoHS compliant.

More information is available on the International Rectifier website at

Availability and Pricing

Pricing for the IRLML0060TRPBF begins at US $0.10 each in 10,000-unit quantities. Production orders are available immediately. Prices are subject to change.

About International Rectifier

International Rectifier (NYSE:IRF) is a world leader in power management technology. IR’s analog and mixed signal ICs, advanced circuit devices, integrated power systems and components enable high performance computing and reduce energy waste from motors, the world’s single largest consumer of electricity. Leading manufacturers of computers, energy efficient appliances, lighting, automobiles, satellites, aircraft and defense systems rely on IR’s power management benchmarks to power their next generation products. For more information, go to

Trademark Notice

IR ® and HEXFET ® are registered trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.

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