In the past, high voltage (HV) discrete device and product development consisted of a long, serial approach where technologies were developed in TCAD*, physical parts fabricated and packaged, measurements performed and an iterative calibration cycle launched.
As designers simulate application circuits with SPICE and not TCAD, application simulations are often performed and calibrated very late in the technology development process when the silicon-based SPICE model is finally available. Any new sized part in the technology or technology adjustment required another round of TCAD simulations, device fabrication, and measurements before a corresponding discrete SPICE model became available for application simulation.
Now, newly developed physically-based, scalable SPICE models that encapsulate the process technology are at the forefront of the design cycle. Designers, through the SPICE model, can simulate product performance prior to device fabrication, reducing design and fabrication cycles, leading to lower costs and faster time to market.
Fairchild has launched scalable, physical SPICE-level models for high voltage discrete technologies including:
- IGBTs (FS Trench 650 V)
- Super Junction FETs (600 V & 800 V SuperFET ® MOSFETs)
- HV Diodes (STEALTH™ I, II diodes, and HyperFast series)
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