Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces shipment of the first RF switches built on the UltraCMOS 10 technology platform. With partner GLOBALFOUNDRIES, the company also announces the completion of product and process qualification for the advanced RF SOI technology.
Introduced in October 2013, UltraCMOS 10 technology provides smartphone manufacturers with unparalleled performance and flexibility. The 130 nm technology combines the performance of UltraCMOS technology with the economies of SOI, and it delivers a more than 50-percent performance improvement over comparable solutions. The advanced technology addresses the unique growth requirements for mobile applications and is the foundation for Peregrine’s next-generation RF switches, tuners and power amplifiers, including the industry’s first reconfigurable RF front end, UltraCMOS Global 1.
“UltraCMOS 10 technology builds on Peregrine’s 25 year legacy of providing high-performance, integrated RF solutions,” says Mark Miscione, vice president of RF technology solutions at Peregrine Semiconductor. “Our technology platform was created to advance the future of RF design with a comprehensive SOI solution. Peregrine is pleased to ship the first of our UltraCMOS 10 switches.”
To develop UltraCMOS 10 technology, Peregrine collaborated with GLOBALFOUNDRIES, a tier-one foundry and leading provider of semiconductor manufacturing technology. Together, the companies co-developed a unique fabrication flow for the versatile RF SOI platform. With the qualification process complete, UltraCMOS 10 technology is now a fully qualified technology platform.
“Peregrine Semiconductor has proven to be an excellent partner for GLOBALFOUNDRIES,” says KC Ang, senior vice president and general manager of Singapore operations at GLOBALFOUNDRIES. “Peregrine has a strong history of innovation and performance leadership, and we believe this trend will continue with the co-developed UltraCMOS 10 technology, the highest performance RF SOI technology in existence.”
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