Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces its next-generation, UltraCMOS PE4312 DSA. Successor to the popular PE4302 – which boasts more than 35 million units shipped since its introduction – the new PE4312 enables flexible, wide dynamic-range network-infrastructure designs that require highly accurate and efficient amplitude control. This DSA upgrade is ideally suited for wireless-infrastructure devices, broadband consumer and infrastructure equipment, land mobile radios (LMRs), test-and-measurement equipment and military RF applications.
Peregrine’s UltraCMOS® PE4312 digital step attenuator offers flexibility and performance for wireless- and broadband-infrastructure equipment, LMRs, test-and-measurement equipment and military RF applications. (Photo: Business Wire)
“Peregrine created the category of digital step attenuators with the UltraCMOS PE4302, and today’s announcement of our next-generation DSA will enable us to preserve our market leadership as the DSA category demands evolve,” says Kinana Hussain, senior marketing manager at Peregrine. “Based on customer requests, the UltraCMOS PE4312 features an extended temperature range that enable RF engineers to simplify thermal design, wider power-supply range to enable flexible power-supply routing, 1.8 V-compatible control voltage levels to enable lower-power designs and higher ESD ratings to ease manufacturing flow.”
UltraCMOS PE4312 Sets New Performance Bar for DSAs
Peregrine’s PE4312 is the only DSA on the market to meet a low insertion loss of 2.1 dB at 4 GHz at any power-supply level between 2.3 V and 5.5 V. It also handles the industry’s widest temperature range between -40 and 105 degrees Celsius and supports both 1.8 V and 3 V control logic. In addition, the PE4312 offers several improvements over PE4302 in attenuation accuracy ±(0.15 + 2% of attenuation setting), linearity (IIP3 of 59 dBm) and switching speed (500 ns). Finally, the PE4312 features a novel architecture to provide safe attenuation-state-transition behavior, which prevents positive power spikes that occur during attenuation-state changes when RF input power is applied. This feature simplifies the digital-interface design, improves signal quality and prevents damage to power amplifier sub-assemblies.