EDI CON 2014 – Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, today announces the Greater China debut of UltraCMOS® Global 1, the industry’s first reconfigurable RF front-end (RFFE) system, at EDI CON 2014. By integrating all the components of the RFFE on a single chip, UltraCMOS Global 1 delivers one platform design – a single, global SKU – that operates in all regions worldwide. The system includes the industry’s first LTE CMOS power amplifier (PA) to meet the performance of gallium arsenide (GaAs) technology. The UltraCMOS Global 1 PA offers a high-band PA path that supports China’s recently licensed TDD-LTE technology networks.
UltraCMOS Global 1 Is a Reconfigurable System
The rapidly growing LTE device market has put unprecedented demands on the performance of the RFFE. To support more than 40 frequency bands and a more than 5,000-fold increase in the number of possible operating states, a reconfigurable and tunable RFFE is now an industry requirement. Peregrine’s UltraCMOS Global 1 provides easy-to-use digitally controlled adaptation across modes and bands, high isolation to solve interoperability issues and scalability to easily support higher band counts with low-loss switching and tunability. This level of reconfigurability is available exclusively on Peregrine’s UltraCMOS 10 technology platform, an advanced CMOS process that uses RF SOI substrates and delivers a 50-percent performance improvement over comparable solutions. Global 1 is fabricated on this advanced-technology platform
On a single chip, Global 1 integrates Peregrine’s established, best-in-class RF switches and tuners seamlessly with a CMOS PA. The UltraCMOS Global 1 RFFE system includes:
- 3-path MMMB PA, post-PA switch, antenna switch and antenna tuner
- Support for envelope tracking
- Common RFFE MIPI interface