MOBILE WORLD CONGRESS – Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, hosts the first public demonstrations of the UltraCMOS Global 1 power amplifier (PA) at Mobile World Congress 2014 in Hall 2, Meeting Room 2A20MR. The UltraCMOS Global 1 PA is the industry’s first LTE CMOS PA to deliver the performance level of gallium arsenide (GaAs) PAs, and it offers the unique benefit of being integrated onto a single chip with Peregrine’s Global 1 system, the first reconfigurable RF front end (RFFE). Only with an integrated, reconfigurable RFFE can 4G LTE platform providers and OEMs create a single-SKU handset design for global markets.
To support over 40 frequency bands and a more than 5,000-fold increase in the number of possible operating states, a truly reconfigurable RFFE is now a requirement. This level of reconfigurability is only feasible with a CMOS process. Peregrine’s entire UltraCMOS Global 1 system – multimode, multiband (MMMB) power amplifier (PA); post-PA switch; antenna switch; and antenna tuner – is based on Peregrine’s UltraCMOS 10 technology platform. This platform leverages 25 years of RF expertise with proven performance demonstrated by more than 2 billion RF SOI units shipped. Before now, no vendor has been able to deliver GaAs-level PA performance in a CMOS PA, which prevented CMOS PAs from competing in the performance-driven LTE handset market. In the demonstration, visitors will see that the UltraCMOS Global 1 PA has the same raw performance as the leading GaAs PAs, as well as a 33-percent efficiency increase over other CMOS PAs. This level of performance is reached without enhancements from envelope tracking or digital predistortion, which is often used when benchmarking CMOS PAs with GaAs PAs.
|When:||Feb. 24-27, 2014|
|Where:||Mobile World Congress 2014|
|Fira Gran Via – Barcelona, Spain|
|Hall 2, Meeting Room 2A20MR|
Kimberly Stoddard, email@example.com, +1 (415) 806-5793
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