Zhou and his colleagues turned to a material with just two elements: aluminum and antimony. They studied the material's phase-changing properties, finding that it's more thermally stable than the Ge-Sb-Te compound. The researchers discovered that Al 50Sb 50, in particular, has three distinct levels of resistance -- and thus the ability to store three bits of data in a single memory cell, instead of just two. This suggests that this material can be used for multilevel data storage."A two-step resistance drop during the crystallization of the material can be used for multilevel data storage (MLS) and, interestingly, three distinct resistance levels are achieved in the phase-change memory cells," Zhou says. "So the aluminum-antimony material looks promising for use in high-density nonvolatile memory applications because of its good thermal stability and MLS capacity."
The "50-50" Chip: Memory Device Of The Future?
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