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GT Advanced Technologies Introduces Silicon Carbide Furnace

MERRIMACK, N.H., July 1, 2013 (GLOBE NEWSWIRE) -- GT Advanced Technologies (Nasdaq:GTAT), today introduced its new SiCloneâ„¢100 silicon carbide (SiC) production furnace. The SiClone100 uses a sublimation growth technique capable of producing high quality semiconducting bulk SiC crystal that can be finished into wafers up to 100 millimeters in diameter. In its initial offering, the SiClone100 is targeted at customers that have developed their own hot zone, qualified a bulk crystal production recipe and are looking to begin volume production.

"GT's new SiClone100 furnace addresses the need in the power electronics industry for more high quality SiC material for use in advanced, high power, high frequency devices," said Tom Gutierrez, GT's president and CEO. "The SiClone100 lays the foundation for our SiC product roadmap that is expected over time to provide customers with access to a complete production environment including recipes, hot zones and consumables capable of producing up to eight-inch SiC wafers."

GT has leveraged its deep domain expertise in crystal growth technology to offer customers who are looking to move from "the lab to the fab" a highly reliable and proven platform to begin volume production of SiC bulk crystal. The SiClone100 furnace is equipped with a state-of-the-art control system, which helps to automate the growth process by integrating the furnace electronics into the human-machine interface (HMI) control. The SiClone100 uses a bottom loading design making it easy to load the hot zone. The control system provides increased flexibility for users to customize process recipes and control key production parameters such as temperature, profile, ramp and gas flow, which improves run-to-run control repeatability thus helping to lower manufacturing costs. GT's onsite engineering and support help customers quickly ramp to volume production.

The company continues to expect SiC furnace sales to contribute to less than 1% of its calendar year 2013 revenue and expects the SiC revenue ramp in 2014 and beyond to develop at a gradual pace given the lengthy design cycle associated with new power devices.

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