BEVERLY, Mass., April 30, 2013 /PRNewswire/ -- Axcelis Technologies, Inc. (Nasdaq: ACLS) today announced the introduction of the Purion XE next generation single wafer high energy implanter, the second tool in its expanding family of Purion ion implanters. The Purion XE is an evolution of the industry leading Optima XEx, combining the process and productivity advantages of the Optima XEx linear accelerator and beamline technology with the reliability, precision, process flexibility, and performance options that define the Purion platform. The Axcelis single wafer LINAC technology is the industry benchmark for high energy productivity and lowest cost of ownership, while providing customers remarkable manufacturing flexibility with true medium current capability. Each member of the Purion family shares a common, powerful 500+ wafers per hour end station, industry leading source technology and an innovative and productive ultra-pure beam line.
Bill Bintz, senior vice president of marketing said, "The Purion platform redefines what chipmakers have come to expect from an ion implanter. It represents the most significant advance in next generation ion implanter platform design, and we're excited to expand the Purion into the high energy segment. We developed the Purion platform in response to customer requirements for absolute beam purity and the most precise dopant placement possible, while ensuring the highest levels of productivity and capital efficiency. Each product in the platform is designed to be the leader in its segment, in every measurable way, and together provide a powerful solution to chip manufacturers' challenges in the sub 16nm era and beyond."
The Purion Platform enables high yield manufacture of sub 16nm planar and 3-D devices. All Purion implanters incorporate industry leading advanced filtration systems, for unsurpassed beam purity, so even the most sensitive devices are implanted for optimized device performance. The platform's industry leading angle control system and constant focal length scanning deliver the most precise and repeatable dopant placement available today. The scanned spot beam architecture designed into the platform enables control of damage engineering as well as other advanced process enabling implants using materials modification techniques required in leading edge device processes.