Peregrine Semiconductor Corporation
, a leading provider of high-performance radio frequency integrated circuits (RFICs), today announced that it has filed a new lawsuit in U.S. District Court alleging the infringement of Peregrine patented intellectual property relating to RFICs and switching technology by RF Micro Devices, Inc. (RFMD).
The suit filed in U.S. District Court for the Southern District of California claims that certain RFMD products infringe a newly issued Peregrine patent relating to silicon-on-insulator (SOI) technology for RFICs. Peregrine seeks, in addition to damages, to permanently enjoin RFMD from further infringement. This new legal action is in addition to an existing lawsuit filed against RFMD in February 2012 and currently pending in U.S. District Court.
The new patent, U.S. Patent 8,405,147, concerns Peregrine’s HaRP™ invention that significantly improves the linearity and circuit performance of RF SOI devices. Peregrine believes the HaRP™ invention is instrumental for RF SOI devices to successfully meet the demanding RF requirements of advanced mobile wireless applications such as 4G LTE.
“Peregrine has enabled significant advancement in the RF front-end architectures of mobile wireless devices with our high-performance products and technology. Our innovative products are used extensively in the latest generation of mobile devices,” said Jim Cable, president and chief executive officer. “Peregrine’s proprietary UltraCMOS
process and design technologies are the result of more than 20 years of intensive research and development activity and the investment of approximately two hundred million dollars. Peregrine is committed to a vigorous defense of its intellectual property and continuing advancements in the field.”
Peregrine has been awarded numerous U.S. and foreign patents based on its pioneering work in developing and manufacturing high-performance products using CMOS-based semiconductor manufacturing processes. These patented innovations allow RFICs to deliver a unique combination of high levels of monolithic integration and performance, small size and low power consumption.