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Made In IBM Labs: Scientists Discover New Atomic Technique To Charge Memory Chips

Such metal to insulator transition materials have been extensively researched for a number of years.  However, contrary to earlier conclusions, IBM discovered that it is the removal and injection of oxygen into the metal oxides that is responsible for the changes in state of the oxide material when subjected to intense electric fields.  

The transition from a conducting state to an insulating state has also previously been obtained by changing the temperature or applying an external stress, both of which do not lend themselves to device applications.

This research was published today in the peer-reviewed journal Science.

CONTACT: Ari  Entin1-408-927-2272 aentin@us.ibm.com

 

SOURCE IBM

Copyright 2011 PR Newswire. All rights reserved. This material may not be published, broadcast, rewritten or redistributed.
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