GLOBALFOUNDRIES’ 14nm-XM offering is based on a modular technology architecture that uses a 14nm FinFET device combined with elements of GLOBALFOUNDRIES’ 20nm-LPM process, which is well on its way to production. Technology development is already underway, with test silicon running through GLOBALFOUNDRIES’ Fab 8 in Saratoga County, N.Y. The XM stands for “eXtreme Mobility,” and it is the industry’s leading non-planar architecture that is truly optimized for mobile system-on-chip (SoC) designs, providing a whole product solution from the transistor all the way up to the system level. The technology is expected to deliver a 40-60% improvement in battery life when compared to today’s two-dimensional planar transistors at the 20nm node.Note to Editors: This news is part of a series of announcements released by GLOBALFOUNDRIES at today’s Common Platform Technology Forum in Santa Clara, CA. The company is featuring five partnerships designed to deliver innovative semiconductor solutions on top of the Common Platform’s shared technology base. The partnerships will be highlighted in a keynote entitled “Common Technology, Uncommon Solutions,” to be delivered by Mike Noonen, executive vice president of marketing, sales, quality and design at GLOBALFOUNDRIES. The keynote will be streamed live beginning at approximately 10 a.m. PST and can be accessed here: http://engage.vevent.com/index.jsp?eid=760&seid=485.
GLOBALFOUNDRIES And Rambus Collaborate To Develop Broad IP Portfolio For 14nm-XM FinFET Process Technology
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