ALISO VIEJO, Calif., Jan. 15, 2013 /PRNewswire/ -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced the availability of a new generation of industrial temperature, silicon carbide (SiC) standard power modules. They are ideally suited for use in high power switch mode power supplies, motor drives, uninterruptible power supplies, solar inverters, oil exploration and other high power, high voltage industrial applications requiring high performance and reliability. The power module family is also offered with extended temperature ranges to meet next-generation power conversion system requirements for higher power densities, operating frequencies and efficiencies.
SiC technology delivers higher breakdown field strength and improved thermal conductivity compared to silicon material. This enables improved performance characteristics in parameters including zero reverse recovery, temperature independent behavior, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability.
"We applied our extensive expertise in power semiconductor integration and packaging to deliver a next-generation family of silicon carbide power modules that deliver outstanding levels of performance, reliability and overall quality," says Philippe Dupin, general manager of Microsemi's Power Module Products group. "Our new modules also allow designers to shrink system size and weight, while reducing total systems costs."About the New SiC ModulesMicrosemi's new industrial temperature SiC power modules feature multiple circuit topologies and are integrated into low profile packages. The majority of the new module product family uses aluminum nitride (AIN) substrates to enable isolation from the heat sink, which improves heat transfer to the cooling system. Additional features include high speed switching, low switching losses, low input capacitance, low drive requirements, low profile and minimum parasitic inductance which enable high frequency, high performance, high density and energy-saving power systems.
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