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Engineered by Micron Technology to pack more performance into users' systems through increased bandwidth and higher density.
DDR4 modules operate at 1.2V, up to 20 percent lower than previous technology, allowing for decreased power consumptions in systems and longer battery life in mobile devices.
DDR4 runs twice as fast as DDR3 speeds (2133 MHz vs. 1066 MHz). This enables systems to process data faster, load applications faster, improve responsiveness, and increase the ability to multi-task and handle data-intensive programs.
BOISE, Idaho, and GLASGOW, United Kingdom, Jan. 10, 2013 (GLOBE NEWSWIRE) -- Crucial, a leading global brand of memory and storage upgrades, today announced its first DDR4 DRAM demonstration at CES 2013. As a global brand of Micron, the Crucial DDR4 DRAM demonstration is based on Micron's 30-nanometer (nm) technology, the 4-gigabit (Gb) DDR4 x8 part is the first piece of what is expected to be the industry's most complete portfolio of DDR4-based modules, which will include RDIMMs, LRDIMMs, SODIMMs and UDIMMs (standard and ECC).
The new Crucial DDR4 DRAM modules use up to 20 percent lower voltage than previous technology, enabling smaller, more efficient form factors and longer battery lives. The DDR4 DRAM will have lower voltage, operating at 1.2V in comparison to current DDR3 offerings operating from 1.35V to 1.5V. The new memory modules enable mainstream data rates that are up to twice as fast as DDR3 memory. This will enable systems to process data faster, load applications faster, improve system responsiveness, and increase the ability to multi-task and handle data-intensive programs.