MwT, a division of IXYS Corporation (NASDAQ: IXYS), introduces two high performance and high efficiency GaAs/AlGaAs pHEMT-based Monolithic Microwave Integrated Circuit (MMIC) products, targeted at the Ku-band and Ka-band high data rate VSAT power amplifier and other applications.
The Ku-band MMIC power amplifier, MMA-121633-R5, operates between 12 and 16 GHz. It offers 32 dBm (1.6W) of output power at a 1dB gain compression point and nearly 35 dBm (3W) and 22 dBm of output power at a 3dB gain compression point between 13–14 GHz. The typical small signal gain is 23 dB. The Third Order Intermodulation (IM3) level is –44 dBc at 20 dBm output power per tune. The DC bias conditions for this part are 6 volts and 1.4 amperes on the drain and –0.9 volt on the gate. The Ka-band MMIC power amplifier, MMA-283136-R5, operates between 28 and 33 GHz. It provides 35 dBm (over 3W) of output power at a 1dB gain compression point and exceptional 36 dBm (4W) of output power at a 3 dB gain compression point.
“Leveraging our deep knowledge and long history of supplying pHEMT based microwave/RF devices and amplifiers for wide range applications, we have successfully developed the Ku-band and Ka-band high power amplifiers as new additions to our MMIC products family,” commented Dr. Greg Zhou, General Manager of MwT. “The state-of-the-art power performance of these two MMIC products clearly demonstrates our superior technical and product capabilities for MMIC products up to the mm-wave frequency range. The applications of these two MMIC products include VSAT, Point-to-Point microwave links for high data rate communications, military and space, and other applications. The exceptional power level from the MMA-283136-R5 exceeds the output power specification demanded by today’s emerging Ka-band (30 GHz) VSAT high data rate applications.”
These two MMIC power amplifiers are fully matched for both input and output terminals for easy cascade and are packaged in the low-cost R5 (5mm x 5 mm) surface mount package. Evaluation boards for power amplifiers in R5 packages are available now. For detailed datasheets and evaluation boards, please visit the MwT website at
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About MwT Inc.
MwT is a leading manufacturer of radio frequency (RF) and microwave frequency discrete semiconductor products, MMIC’s, hybrid modules, and connecterized amplifiers for wireless communication infrastructure, military/aerospace, industrial, and medical applications. The technologies include GaAs, AlGaAs and GaN based products. MwT houses one of four IXYS fab facilities, offering a factory specializing in GaAs based semiconductor and hybrid microwave integrated circuitry manufacturing.