Earlier this year, IBM researchers demonstrated carbon nanotube transistors can operate as excellent switches at molecular dimensions of less than ten nanometers – the equivalent to 10,000 times thinner than a strand of human hair and less than half the size of the leading silicon technology. Comprehensive modeling of the electronic circuits suggests that about a five to ten times improvement in performance compared to silicon circuits is possible.
There are practical challenges for carbon nanotubes to become a commercial technology notably, as mentioned earlier, due to the purity and placement of the devices. Carbon nanotubes naturally come as a mix of metallic and semiconducting species and need to be placed perfectly on the wafer surface to make electronic circuits. For device operation, only the semiconducting kind of tubes is useful which requires essentially complete removal of the metallic ones to prevent errors in circuits. Also, for large scale integration to happen, it is critical to be able to control the alignment and the location of carbon nanotube devices on a substrate.
To overcome these barriers, IBM researchers developed a novel method based on ion-exchange chemistry that allows precise and controlled placement of aligned carbon nanotubes on a substrate at a high density – two orders of magnitude greater than previous experiments, enabling the controlled placement of individual nanotubes with a density of about a billion per square centimeter.
The process starts with carbon nanotubes mixed with a surfactant, a kind of soap that makes them soluble in water. A substrate is comprised of two oxides with trenches made of chemically-modified hafnium oxide (HfO2) and the rest of silicon oxide (SiO2). The substrate gets immersed in the carbon nanotube solution and the nanotubes attach via a chemical bond to the HfO2 regions while the rest of the surface remains clean.
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