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Ultratech Introduces New Laser Spike Anneal Products With Novel, Proprietary Dual-Beam Technology

SAN JOSE, Calif., Oct. 22, 2012 /PRNewswire/ -- Ultratech, Inc. (Nasdaq: UTEK), a leading supplier of lithography and laser-processing systems used to manufacture semiconductor devices and high-brightness LEDs (HB-LEDs), today announced that it has introduced two new laser spike anneal (LSA) products based on its proprietary dual-beam laser technology, which enables expanded processing capabilities compared to conventional millisecond annealing tools.  Both new products are based on Ultratech's flagship platform, the LSA101, which is currently in high-volume production for 40- and 28-nm logic devices.  The LSA101LP features a second low-power (LP) laser beam to enable low-temperature processing required for middle-of-line (MOL) applications.  Multiple LSA101LP systems have already been delivered to several logic foundries, and are inserted into 20-nm baseline processes.  The second dual-beam system, the LSA101HP, features a second high-power (HP) laser which enables longer dwell times required for some advanced front-end-of–line (FEOL) applications.  The LSA101HP is scheduled to be delivered to several logic foundries in the first half of 2013.  Both dual-beam systems are field upgradable on the LSA101 platform.

In the LSA101 system, a single CO2 laser beam is used to heat the wafer surface from a substrate temperature of approximately 400C to the peak annealing temperature in the range 1100-1350C.  In the LSA101LP system, a second low-power laser beam is incorporated to preheat the wafer, which enables the lower substrate temperatures required for MOL processes, such as nickel silicide formation.  In addition, a new temperature measurement and control system has been developed to enable the lower peak temperatures required for these processes.  For leading-edge logic nodes, the short time scale of millisecond annealing has been shown to minimize nickel silicide diffusion and leakage-related yield loss.  For MOL applications, the maximum throughput of the system is an industry-leading 70wph.  Compared to competing laser annealing systems, the LSA101LP offers superior within-die uniformity for different layouts due to its long-wavelength source, industry-leading process control due to its full-wafer closed loop temperature control, and a significantly lower cost of ownership due to higher throughput and low cost of consumables.

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