SUNNYVALE, Calif., Oct. 17, 2012 (GLOBE NEWSWIRE) -- Alpha and Omega Semiconductor Limited (AOS) (Nasdaq:AOSL), a designer, developer and global supplier of a broad range of power semiconductors, today set a new standard in power density and technology innovation for discrete power MOSFETs with exposed-source XSFET™, a new patent-pending packaging technology. XSFET incorporates the packaging technology where the bottom of the package is the "source," which enables power designers to remove heat more effectively to PCB ground plane. It features a large top heat slug which can be "top-exposed" or "non top-exposed" depending upon design criteria. The top-exposed version delivers a significant increase in heat transfer, which helps to reduce power losses in a system by keeping the die cooler.
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Different from some of the existing double-sided cooling packaging options in the market today, AOS's new exposed-source packaging solution offers standard lead-frame based board mounting in a fully encapsulated DFN molded package, minimizing the thermal discrepancy between the device and the PCB while offering near zero parasitic inductance with its layout friendly footprint.Utilizing AOS's new 30V AlphaMOS™ silicon technology together with exposed-source packaging, AOE6580 and AOE6580T (with top-exposed option) are the best-in-class 30V N-channel devices in the market today. Both devices are optimized for high performance demanding motor control, OR'ing, and E-fuse applications. Their very low on-resistance (R DS(ON) = 0.95mΩ max @10V GS) in exposed-source DFN 5x6 package also make these devices very attractive for power supplies in computing, telecom, and high power density point-of-load sockets. Optimized for ultra-low conduction and switching losses, AOE6580 and AOE6580T minimize power losses in applications, thus providing power designers the flexibility in optimizing losses, performance, space, and cost. AOE6770T and AOE6772T offer very high efficiency in server and high-end notebook applications by utilizing the combination of 25V AlphaMOS silicon technology and exposed-source packaging technology with the top-exposed option in industry standard DFN5x6 footprint. AOE7770T completes the solution as high-side MOSFET by combining exposed-source technology in compact DFN3x3 footprint with top-exposed option.