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Photo Release -- Alpha And Omega Semiconductor Enters The IGBT Market With Best-in-Class Product Family

Stocks in this article: AOSL

SUNNYVALE, Calif., Oct. 10, 2012 (GLOBE NEWSWIRE) -- Alpha and Omega Semiconductor Limited (AOS) (Nasdaq:AOSL), a designer, developer and global supplier of a broad range of power semiconductors, today announced the release of its first family of high efficiency 600V Insulated Gate Bipolar Transistors (IGBTs) in AlphaIGBT™ technology to address the growing need for energy efficient devices targeting motor control and power conversion applications. AOS's patent pending AlphaIGBT proprietary technology combines a unique cell and vertical device structure to offer best-in-class conduction (V CE(SAT)) versus switching loss (E OFF) trade-off and longer short-circuit capability. As a result, AlphaIGBT enables a wide operation frequency range to address a variety of applications such as white goods (air conditioners, refrigerators, washing machines), industrial equipment (general inverters, servo motors, sewing machines, welding machines, uninterruptible power supplies), as well as commercial type heating and solar inverters. A photo accompanying this release is available at http://www.globenewswire.com/newsroom/prs/?pkgid=15132 .

AOS_IGBT600V_HR

AOS's AlphaIGBT products offer 2.5 times lower turn-off switching loss (E OFF) and 2 times higher short circuit withstand time (SCWT) rating compared to the current leading competition device with similar V CE(SAT) values. The ultra low gate-charge (Q g) of AlphaIGBT makes the devices incredibly easy to drive. In addition, the low Q GC/Q GE ratio allows the devices to withstand higher dV/dt transients and prevents oscillation issues in bridge applications. Combined with the 5.6V V GE(TH), a feature that can be used as an advantage to extend the use of unipolar (0-15V) gate drives saving the expense and complexity of bipolar (-15/15V) gate drives. The positive temperature coefficient of V CE(SAT) and low overall gate charge characteristics of AlphaIGBT technology allow designers to easily parallel more devices and, or larger devices with existing drive circuits.

"After successfully establishing its position in the low-voltage to high-voltage MOSFET markets with best-in-class products, AOS is now ready to open a new chapter by offering superior IGBT products," said Yalcin Bulut, Vice President of Discrete Product Lines at AOS. "With an expertise in device physics and deep system and application knowledge, AOS is raising the bar for IGBT performance as well."

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