SAN JOSE, Calif., Oct. 3, 2012 (GLOBE NEWSWIRE) -- Integrated Silicon Solution, Inc. (Nasdaq:ISSI), a leader in advanced memory solutions, today announced it has begun sampling production units of its new 1Gigabit (1Gbit) and 2 Gigabit (2Gbit) DDR3 devices, the first of ISSI's family of DDR3 SDRAMs. The 1Gbit DDR3 device is the IS43TR16640A, which operates at 1.5V, is organized as 64Mx16 and packaged in a 96-ball BGA. The 2Gbit DDR3 device is the IS43TR16128A, which operates at 1.5V, is organized as 128Mx16 and packaged in a 96-ball BGA. This initial offering of the DDR3 SDRAM product family adds to ISSI's extensive selection of DRAMs. By using advanced technology, ISSI is able to provide the long lifecycle product support as required by applications in automotive, communications, industrial, medical and mil-aerospace.
ISSI Announces Sampling Of 1Gb And 2Gb DDR3 SDRAM
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