GREENSBORO, N.C., Sept. 5, 2012 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today that it is enabling Samsung's next-generation GALAXY Note II with RFMD's PowerSmart® Power Platforms – the industry's first and only converged multimode, multiband (MMMB) power amplifiers.
Samsung Selects RFMD's PowerSmart(R) To Power Next-Generation GALAXY Note II
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