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Rambus And GLOBALFOUNDRIES Demonstrate Outstanding Performance And Power Results In 28nm Silicon Test Chips

Rambus Inc. (NASDAQ:RMBS) and GLOBALFOUNDRIES today announced the results from their collaboration on two separate memory architecture-based silicon test chips. The first test chip demonstrates solutions for mobile memory applications, such as smartphones and tablets. The second test chip demonstrates solutions for compute main memory applications, such as servers. Using GLOBALFOUNDRIES’ 28-nanometer super low power (28nm-SLP) process, and demonstrating the capabilities of one of the most power efficient and highest performance analog/mixed-signal offerings for advanced system-on-chip (SoC) developments, the results of the two test chips have surpassed power and performance expectations.

“The partnership with GLOBALFOUNDRIES is vital to our ongoing commitment to innovation that advances the leading edge of electronics performance,” said Sharon Holt, senior vice president and general manager of the Semiconductor Business Group at Rambus. “GLOBALFOUNDRIES’ 28nm-SLP process is ideal for achieving multi-gigahertz data rates at unmatched power efficiencies.”

“Our 28nm-SLP technology gives SoC designers a robust manufacturing option for a new generation of feature-rich consumer and mobile devices, and assures optimal power consumption that is critical for success in these markets,” said Mojy Chian, senior vice president of Design Enablement at GLOBALFOUNDRIES. “We are pleased to be working closely with Rambus to demonstrate the capabilities and design enablement ecosystem available for the industry’s most cost-effective and versatile 28SLP process.”

Rambus’ mobile and server memory architectures are designed to meet the growing performance demands of future systems driven by applications such as 3D gaming, HD video streaming, capture and encoding, while providing unmatched power efficiency. With the rising popularity of streaming video, smartphones, tablets, and other smart mobile devices, there is a growing need for next-generation dynamic random access memory (DRAM) technologies capable of delivering the bandwidth necessary to power devices with the latest feature sets.

GLOBALFOUNDRIES’ 28nm-SLP technology is designed specifically for the next generation of smart mobile devices, enabling designs with faster processing speeds, smaller feature sizes, lower standby power and longer battery life. The technology is based on bulk silicon CMOS substrates and utilizes the same “Gate First” approach to High-k Metal Gate (HKMG) that has reached volume production in GLOBALFOUNDRIES Fab 1 in Dresden, Germany.

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