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Silicon Laboratories Inc. (NASDAQ: SLAB), a leader in high-performance, analog-intensive, mixed-signal ICs, today introduced two next-generation EZRadio® wireless ICs designed to simplify the addition of high-performance wireless connectivity to cost-sensitive embedded applications. The new EZRadio Si4455 transceiver and Si4355 receiver products combine market-leading advances in size, performance and low-power operation with easy-to-use development tools. The EZRadio ICs are well suited for a variety of wireless applications such as remote controls, automotive remote keyless entry (RKE), home and building automation, security and lighting control, wireless sensor networks, and health and fitness devices.
Adding RF connectivity to embedded applications can be a complex, costly and time-consuming process. Silicon Labs’ new EZRadio products make it easy and cost-effective for developers to incorporate bidirectional and one-way RF links into their products without performance trade-offs. By reducing the barriers to wireless development, the EZRadio family can help expand the use of high-performance wireless connectivity in embedded designs.
Covering the 283-350 MHz, 425-525 MHz and 850-960 MHz frequency bands, the Si4x55 devices offer +13 dBm output power and -116 dBm sensitivity, enabling them to deliver significantly better range than other sub-GHz solutions. The devices offer superior out-of-band performance (-56 dB selectivity and -61 dB blocking at 1 MHz offset), making it easier to meet regulatory standards and operate in noisy environments without additional filtering. The Si4x55 devices require minimal external components and are available in the smallest form factor in their class (3 mm x 3mm), making them ideal for cost-sensitive, space-constrained designs.
In addition to providing superior RF performance, the Si4x55 EZRadio products offer industry-leading low-power operation suitable for battery-backed applications. The Si4x55 devices also offer the best standby current in their class (50 nA), an impressive active transmit current of 20 mA at +10 dBm and a low receive current of 10 mA.