TriQuint's New Gallium Nitride (GaN) Solutions Improve Efficiency, Lower BOM's, Offer Wideband Coverage And Are Ideally Suited For Commercial And Defense RF Applications Including Network Radios, Broadband Test, Mini-CDL's And VSAT. (Graphic: Business Wire)

TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF solutions provider and technology innovator, released four new gallium nitride (GaN) devices at the IMS / MTT-S Symposium in Montreal, Canada (June 17-22). TriQuint GaN solutions improve RF efficiency, reduce overall costs and enhance system ruggedness.

RF designers attending IMS / MTT-S can access public forums where TriQuint will explore high performance GaN capabilities and ways this technology can enable smaller circuits, as well as better-performing low voltage and high power systems. GaN-based integrated circuits outperform silicon, gallium arsenide and other semiconductor technologies. GaN devices are also seen by the industry as key to future ‘green’ RF and DC-DC power solutions that can reduce network electrical consumption, enable greater range in electric vehicles or extend smartphone battery life.

“TriQuint is advancing state-of-the-art high frequency / high power GaN research. Our internal product development programs are creating new commercial and defense lower-voltage devices. Today we are announcing four new GaN products enabled by TriQuint’s high performance technology leadership,” said TriQuint Defense Products and Foundry Services Vice President and General Manager, James L. Klein.

TriQuint GaN Solutions / Technology Leadership at IMS / MTT-S 2012

TriQuint is announcing three new GaN power amplifiers that deliver greater efficiency, wideband coverage and excellent performance for communications, defense and civilian radar: the TGA2572-FL (14-16 GHz), now available; as well as the TGA2579-FL (14-15.5 GHz) and the TGA2593-GSG (13-15 GHz), available in July. TriQuint is also announcing availability of the T1G6003028-FS, a 30W wideband GaN packaged transistor that can cut the number of driver circuits in a typical power amplifier design by 50%. Contract TriQuint product marketing or sales for GaN samples and evaluation boards.

TriQuint GaN expertise is highlighted in a Microwaves & RF magazine webcast exploring today’s solutions and the technology’s future. TriQuint and other GaN leaders explore frequency, power and GaN capabilities in this forum. Register to view the webcast.

TriQuint GaN product innovation will be the focus of a presentation hosted by Richardson RFPD in IMS / MTT-S Booth 1818 at 1PM on June 19. TriQuint will lead a GaN product discussion on newly-released RF power amplifiers, switches, transistors and integrated assembly / packaging capabilities. See Richardson’s list of IMS / MTT-S activities.

TriQuint will also share its GaN expertise in a special panel session hosted by Microwave Journal . TriQuint, Strategy Analytics and other panelists will examine the global interest in GaN, product innovation and ways advanced R&D is leading to new discoveries. The forum will be in Room 516 of Montreal’s Palais des Congrès (8-10 AM June 20) and is open to all conference attendees.

TriQuint Gallium Nitride Product Innovation, Honors & Resources:
Heritage				Leader in defense and commercial GaN research since 1999
Research				Leader in performance and reliability GaN development
University Partners				Massachusetts Institute of Technology, University of Notre Dame and University of Colorado at Boulder
The Global GaN Impact				Strategy Analytics recognizes TriQuint’s GaN R&D / GaN ProductInnovation
Active R&D programs				DARPA NEXT program for highly complex, high frequency GaN MMICs
				Defense Production Act (DPA) Title III program for GaN on SiC; Radar andEW MMICs: Air Force and Navy sponsors
				DARPA Microscale Power Conversion program to develop ultra-fast GaNpower switch technology that is integrated into next-generationamplifiers
				DARPA Near Junction Thermal Transport (NJTT) GaN program to increasecircuit power handling capabilities through enhanced thermal management
				Army Research Laboratory (ARL) Cooperative Research and DevelopmentAgreement (CRADA) to jointly develop advanced GaN circuits
Recent Honors				2011 ‘Compound Semiconductor’ CS Industry Award for DARPA NEXT;2012 CS Industry Award for DARPA MPC program
GaN Products				Wide selection of innovative GaN amplifiers, transistors and switches
GaN Foundry				0.25-micron GaN on SiC; 100mm wafers; DC-18 GHz applications

Visit TriQuint at IMS / MTT-S 2012 (Booth 1815) for information about gallium nitride, gallium arsenide, SAW and BAW solutions for networks, defense and aerospace including packaged transistors, amplifiers, switches and integrated assemblies. Find TriQuint solutions at www.triquint.com/defense, or register for product updates and our newsletter.

FORWARD LOOKING STATEMENTS

This TriQuint Semiconductor, Inc. (NASDAQ: TQNT) press release contains forward-looking statements made pursuant to the Safe Harbor provisions of the Private Securities Litigation Reform Act of 1995. Readers are cautioned that forward-looking statements involve risks and uncertainties. The cautionary statements made in this press release should be read as being applicable to all related statements wherever they appear. Statements containing such words as ‘increase’, ‘improve’, ‘reduce’, or similar terms are considered to contain uncertainty and are forward-looking statements. A number of factors affect TriQuint’s operating results and could cause its actual future results to differ materially from any results indicated in this press release or in any other forward-looking statements made by, or on behalf of, TriQuint including, but not limited to: those associated with the unpredictability and volatility of customer acceptance of and demand for our products and technologies, the ability of our production facilities and those of our vendors to meet demand, the ability of our production facilities and those of our vendors to produce products with yields sufficient to maintain profitability, as well as the other “Risk Factors” set forth in TriQuint’s most recent 10-Q report filed with the Securities and Exchange Commission. This and other reports can be found on the SEC web site, www.sec.gov. A reader of this release should understand that these and other risks could cause actual results to differ materially from expectations expressed / implied in forward-looking statements.

FACTS ABOUT TRIQUINT

Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global provider of innovative RF solutions and foundry services for the world’s top communications, defense and aerospace companies. People and organizations around the world need real-time, all-the-time connections; TriQuint products help reduce the cost and increase the performance of connected mobile devices and the networks that deliver critical voice, data and video communications. With the industry’s broadest technology portfolio, recognized R&D leadership, and expertise in high-volume manufacturing, TriQuint creates standard and custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has ISO9001-certified manufacturing facilities in the U.S., production in Costa Rica, and design centers in North America and Germany. For more information, visit www.triquint.com.

TriQuint: Connecting the Digital World to the Global Network ^®

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